PECVD
(Plasma Enhanced Chemical Vapor Deposition)

When using a PECVD-process, as with CVD (Chemical Vapor Deposition), only gases are used. For PECVD the deposition temperatures are considerably lower (100–600 °C) compared to the classical CVD with temperatures in the rage of 1000 °C and higher. The plasma is used to enforce the reaction  as well as the dissociation of the reactive gases, such as C₂H₂ or CH₄ during the deposition of DLC (Diamond Like Carbon) coatings.

Also combinations of processes such as

  • PECVD + magnetron sputtering
  • PECVD + arc evaporation

are used.

To deposit well adherent DLC-coatings adhesive layers have to be deposited prior forming DLC. Cr (Chromium), deposited by arc evaporation, is an excellent candidate to improve the adhesion of DLC.